Growth of Si12xGex„011... on Si„011...1632 by gas-source molecular beam epitaxy: Growth kinetics, Ge incorporation, and surface phase transitions
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Growth of Si12xGex„011... on Si„011...1632 by gas-source molecular beam epitaxy: Growth kinetics, Ge incorporation, and surface phase transitions N. Taylor, H. Kim, T. Spila, J. A. Eades, G. Glass, P. Desjardins, and J. E. Greene Materials Science Department, Coordinated Science Laboratory, and Materials Research Laboratory, University of Illinois, 1101 West Springfield Avenue, Urbana, Illinois 61801
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تاریخ انتشار 1998